Datasheet transistor c458

Transistor datasheet

Datasheet transistor c458

NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1711 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching. 2SD525 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO- 220! 2N3819 JFET VHF/ UHF Amplifier N– Channel – Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain– Source Voltage VDS 25 Vdc Drain– Gate Voltage VDG 25 Vdc Gate– Source Voltage VGS 25 Vdc Drain Current ID 100 mAdc Forward Gate Current IG( f) 10 mAdc Total Device Dissipation @ TA = 25° C Derate above 25° C PD c458 350 2. The BC548 is a general- purpose NPN bipolar junction transistor commonly used in European and American electronic equipment. Nanyang Plaza Kwun Tong, 57 Hung To Road H. PNP Epitaxial Silicon Transistor Elite Enterprises ( H. It is notably often the first type of bipolar transistor hobbyists encounter and is often featured in designs in hobby electronics magazines where a general- purpose transistor is required.


Safe operating area curves indicate IC. hk Page: 1 / 1 LOW FREQUENCY AMPLIFIER Collection Dissipation : P C( max) = 400mW Collector- Emitter Voltage : V CEO = - 50V. Complementary The complementary p- n- p transistor to the 2SC458- B is the 2SA1031- B. c458( c) nte equvilent nte289 transistor npn c458 silicon 35v ic= 0. That is, a weak input signal can be amplified ( made stronger) by a transistor. Complement to 2SB595 ABSOLUTE MAXIMUM RATINGS ( T A= 25℃ ℃ ℃ ℃ ) Characteristic Symbol Rating Unit Collector- Base Voltage Collector- Emitter Voltage Emitter- Base voltage Collector Current ( DC) Collector Dissipation ( Tc= 25℃ ) Junction Temperature Storage Temperature VCBO Sometimes the " 2S" prefix is not marked on the package - the 2SC458- B transistor might be marked " c458 C458- B". data sheet : nte. : A1015 Flat 2505, 25/ F. 2SC458 datasheet 2SC458 circuit c458 : HITACHI - Silicon NPN Epitaxial, alldatasheet, 2SC458 datasheets, datasheet, c458 2SC458 pdf Datasheet search site for Electronic.

a transistor: average junction temperature and second breakdown. C458 datasheet datasheet, C458 pdf, data sheet, C458 data sheet pdf. ss8050 — npn epitaxial silicon transistor. Datasheet transistor c458. to obtain the latest product information, most up- to- date datasheet . com offers 278 nec transistor products. BJT; MOSFET; IGBT; SMD c458 CODE; PACKAGES; APPS. SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4584 DESCRIPTION · With TO- 3PML package · High voltage, high speed · Switching power transistor P SavantIC 2.
8a to- 92 case audio amp and switch comp' l to nte290. search c458 datasheet. TIP41A - Complementary Silicon Plastic c458 Power Transistors. s9013 transistor d667 transistor c114 transistor b772 transistor c3807 transistor c458 transistor c2240 transistor. reliability function, design. C458 datasheet C458 circuit : NJSEMI - INVERTER THYRISTOR C458, alldatasheet, C458 datasheets, datasheet, C458 pdf Datasheet search site for Electronic Components. INTRODUCTION - A transistor is a small electronic device that can cause changes in a large electrical output signal by small changes in a small input signal. Tel: Fax: Email: com.


Datasheet transistor

By closing this message or starting to navigate on this website, you agree c458 datasheet the usage of cookies. The support and availability of the listed specifications and functionalities varies depending on operating systems, applications and network c458 datasheet as well as network and system configurations. C2390 NPN Silicon Transistor Components datasheet pdf data sheet FREE from Datasheet4U. com Datasheet ( data sheet) search for integrated circuits ( ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes.

datasheet transistor c458

the C458 is a silicon NPN transistor, Uce = 30V, Ic = 100mA, applications: general purpose, if OEM from japan see 2SC458: Source: 2SC458: Picture: not available. Type C458 reverse blocking thyristor is suitable for inverter applications. The silicon junction is manufactured by the all- diffused process and utilizes the field- proven, interdigitated amplifying gate structure.